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| SUR3080PT thru SUR30120PT Ultra Fast Recovery Epitaxial Diodes A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode SUR3080PT SUR30100PT SUR30120PT VRSM V 800 1000 1200 VRRM V 800 1000 1200 J K L M N Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 25 15 150 75 80 65 70 28 27 21 20 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 78 0.4...0.6 2 W Nm g SUR3080PT thru SUR30120PT Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=15A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 250 150 4 2.2 2.6 1.65 46.2 1.6 0.5 60 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC _ VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C o 50 6.5 70 7.2 ns A FEATURES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR3080PT thru SUR30120PT Ultra Fast Recovery Epitaxial Diodes 30 A 25 20 15 10 5 0 0 1 VF 2 3 V 4 TVJ=25C TVJ=100C TVJ=150C 3.0 C 2.5 2.0 1.5 1.0 max. 0.5 0.0 1 10 -diF/dt 100 A/s 1000 typ. TVJ=100C VR= 540V IRM 30 TVJ=100C A V =540V R 25 max. 20 15 10 5 0 0 100 200 -diF/dt IF Qr IF=11A IF=22A IF=11A IF=5.5A IF=11A IF=22A IF=11A IF=5.5A typ. 300 A/s 400 Fig. 1 Forward current versus voltage drop. 1.4 1.2 1.0 Kf Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. 60 V 50 40 30 tfr 20 400 VFR 1200 ns 1000 800 tfr 600 1.0 s 0.8 TVJ=100C VR=540V IRM 0.8 0.6 trr max. 0.6 IF=11A IF=22A IF=11A IF=5.5A VFR QR 0.4 0.4 0.2 0.2 0.0 0 40 TJ 80 120 C 160 0.0 0 100 200 -diF/dt 300 A/s 400 typ. 10 0 0 100 200 diF/dt TVJ=125C IF=11A 300 A/s 400 200 0 Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. |
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